2SA1371 transistor (pnp) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v (br)cbo : -300 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -300 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -300 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -200 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -0.1 a dc current gain h fe(1) v ce = -10 v, i c = -10 ma 40 320 collector-emitter saturation voltage v ce(sat) i c = -20 ma, i b = -2 ma -0.6 v base-emitter saturation voltage v be(sat) i c = -20 ma, i b = -2 ma -1 v transition frequency f t v ce = -30 v, i c = -10 ma 100 mhz collector output capacitance c ob v cb = -30 v, i e =0, f= 1 mhz 5 pf classification of h fe(1) rank c d e f range 40-80 60-120 100-200 160-320 to-92mod 1. emitter 2. collector 3. base 123 2SA1371 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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